Kioxia starts mass production of 10th-gen BiCS FLASH memory at Kitakami plant

Key takeaway

• Kioxia has begun mass production of its 10th-generation BiCS FLASH memory chip at its Kitakami plant as of July 3, 2026, targeting demand from AI data centers and enterprise SSDs.

• The new chip delivers 33% faster interface speed compared to the prior generation and is being produced alongside earlier-generation chips to balance capacity and cost.

• Japan's government is supporting the expansion with over 370 billion yen in subsidies approved in June 2026.

3 Key Points

FAQ

What is the main technical improvement in the 10th-generation BiCS FLASH?

The 10th-generation chip achieves a NAND interface speed of 4.8 Gbps, which is 33% faster than the 8th-generation. It also uses new technologies called CBA (CMOS directly Bonded to Array) and OPS (On Pitch Select Gate Drain) to improve bit density and reduce power consumption.

Where is this new chip being produced?

The 10th-generation BiCS FLASH is being produced at Kioxia's K2 facility in Kitakami, which started production on July 3, 2026. It will also be produced at the Sandisk facility. Kioxia plans to expand production to a second manufacturing building at K2.

How is Japan supporting this production expansion?

Japan's government approved 370 billion yen in subsidies announced on June 23, 2026, with an additional 68 billion yen in subsidies planned through fiscal 2040.