
What happened
Samsung Electronics began mass production of 3nm chips using GAA (Gate-All-Around) structures in 2022, the world's first. TSMC will adopt GAA at 2nm (N2) from 2025 mass production, and Intel will move to mass production of its RibbonFET GAA from 2026.
Why it matters
As miniaturization approaches physical limits, these structures are seen as essential for continuing to make chips more power-efficient and higher-performing — the foundation for AI computing.
What to watch
Whether these three companies can mass-produce complex GAA structures with high yields; the race is now about manufacturing execution, not just design. Watch Intel's 2026 production transition.
WHO IT HITSThis affects semiconductor manufacturers, chip designers, and companies investing in AI data centers, as it determines future chip performance and power efficiency for AI workloads.
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The article traces the evolution of semiconductor manufacturing from planar transistors to FinFET and now GAA structures, driven by the physical limits of miniaturization. As chip features shrink, controlling current becomes harder, prompting the shift to 3D structures like FinFET and then GAA, where the gate fully surrounds the channel. The three leading foundries — Samsung, TSMC, and Intel — are pursuing different timelines: Samsung began GAA mass production in 2022, TSMC plans it for 2nm in 2025, and Intel for 2026. The outcome hinges on whether these companies can achieve high yields in mass production, which will determine their ability to supply advanced chips for AI and other demanding applications. For AI hardware designers and cloud providers, the availability and cost of these chips will shape the pace of AI model deployment and data center efficiency.
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