Renesas debuts first 100V GaN FETs for AI data centers

Renesas is extending its GaN portfolio downward in voltage for the first time, addressing applications where high efficiency and high power density are demanded but where 100V-class parts were previously a gap. The new devices use enhancement-mode (normally-off) GaN technology, which is designed to be driven like standard silicon, and they are offered in packages compatible with existing MOSFET layouts, according to the company.

The stated benefits—higher efficiency, faster switching, and better heat dissipation—are aimed at shrinking board area, magnetic components, and passive parts, while reducing reliance on fans and active cooling. Renesas says this can simplify systems and cut bill-of-materials costs. The company also offers two cooling configurations, bottom-side and double-sided, to give designers flexibility.

The competitive test will be whether power designers actually adopt these parts in AI data centers, robotics, and industrial motor drives, where reliability and long qualification cycles matter. If the efficiency and density claims hold in practice, Renesas could become a more complete supplier for low-voltage GaN, but the transition still hinges on customer validation and design wins.